1N6481HE3/97 - DIODE GEN PURP 400V 1A DO213AB
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-1N6481HE3/97
Fabricant
Kout Deskripsyon
DIODE GEN PURP 400V 1A DO213AB
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3523250 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen 1N6481HE3/97 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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Espesifikasyon pou 1N6481HE3/97
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : 1N6481HE3/97
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 400V 1A DO213AB
Seri : SUPERECTIFIER®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 400V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 1.1V @ 1A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 10µA @ 400V
Kapasite @ Vr, F : 8pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AB, MELF (Glass)
Pake Aparèy Founisè : DO-213AB
Operating Tanperati - Junction : -65°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
dokiman pou 1N6481HE3/97
Fich : 1N6481HE3/97.pdf
pwodwi ki gen rapò pou 1N6481HE3/97 Vishay Semiconductor Diodes Division
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