TJ8S06M3L(T6L1,NQ) - MOSFET P-CH 60V 8A DPAK-3

Fabricant Nimewo Pati

TJ8S06M3L(T6L1,NQ)

Entèn Nimewo Pati

AX-TJ8S06M3L(T6L1,NQ)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET P-CH 60V 8A DPAK-3

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

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1012130 Pieces

referans pri

~~USD 0.2772~~

pri nou

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Espesifikasyon pou TJ8S06M3L(T6L1,NQ)

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : TJ8S06M3L(T6L1,NQ)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET P-CH 60V 8A DPAK-3

Seri : U-MOSVI

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 104 mOhm @ 4A, 10V

Vgs (th) (Max) @ Id : 3V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V

Vgs (Max) : +10V, -20V

Antre kapasite (Ciss) (Max) @ Vds : 890pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 27W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK+

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : TJ8S06 , TJ8S06M3L

dokiman pou TJ8S06M3L(T6L1,NQ)

Fich : TJ8S06M3L(T6L1,NQ).pdf

pwodwi ki gen rapò pou TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage

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