NDDL01N60Z-1G - MOSFET N-CH 600V 0.8A IPAK

Fabricant Nimewo Pati

NDDL01N60Z-1G

Entèn Nimewo Pati

AX-NDDL01N60Z-1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 0.8A IPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

21640 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NDDL01N60Z-1G

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Nimewo pati : NDDL01N60Z-1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 0.8A IPAK

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 800mA (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 15 Ohm @ 400mA, 10V

Vgs (th) (Max) @ Id : 4.5V @ 50µA

Chaje Gate (Qg) (Max) @ Vgs : 4.9nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 92pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 26W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : IPAK (TO-251)

Pake / Ka : TO-251-3 Short Leads, IPak, TO-251AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NDDL , NDDL01

dokiman pou NDDL01N60Z-1G

Fich : NDDL01N60Z-1G.pdf

pwodwi ki gen rapò pou NDDL01N60Z-1G ON Semiconductor

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