NP33N06YDG-E1-AY - MOSFET N-CH 60V 33A 8HSON

Fabricant Nimewo Pati

NP33N06YDG-E1-AY

Entèn Nimewo Pati

AX-NP33N06YDG-E1-AY

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 60V 33A 8HSON

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

66710 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NP33N06YDG-E1-AY nan stock pou vann.

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Espesifikasyon pou NP33N06YDG-E1-AY

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NP33N06YDG-E1-AY

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 60V 33A 8HSON

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 33A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 14 mOhm @ 16.5A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3900pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta), 97W (Tc)

Operating Tanperati : 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-HSON

Pake / Ka : 8-SMD, Flat Lead Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NP33N , NP33N06Y

dokiman pou NP33N06YDG-E1-AY

Fich : NP33N06YDG-E1-AY.pdf

pwodwi ki gen rapò pou NP33N06YDG-E1-AY Renesas Electronics America

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