1N5061TAP - DIODE AVALANCHE 600V 2A SOD57

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE AVALANCHE 600V 2A SOD57
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2783370 Pieces
referans pri
USD 0.1008
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen 1N5061TAP nan stock pou vann.
D 'opsyon ak anbake tan:
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FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou 1N5061TAP

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : 1N5061TAP
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE AVALANCHE 600V 2A SOD57
Seri : -
Estati Pati : Active
Kalite dyòd : Avalanche
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 2A
Voltage - Forward (Vf) (Max) @ Si : 1.15V @ 2.5A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 4µs
Kouran - Fèy Reverse @ Vr : 1µA @ 600V
Kapasite @ Vr, F : 40pF @ 0V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : SOD-57, Axial
Pake Aparèy Founisè : SOD-57
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : 1N5 , 1N50

dokiman pou 1N5061TAP

Fich : 1N5061TAP.pdf

pwodwi ki gen rapò pou 1N5061TAP Vishay Semiconductor Diodes Division

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