FDD8N50NZTM - MOSFET N-CH 500V 6.5A DPAK

Fabricant Nimewo Pati

FDD8N50NZTM

Entèn Nimewo Pati

AX-FDD8N50NZTM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 500V 6.5A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

843200 Pieces

referans pri

~~USD 0.332736~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDD8N50NZTM nan stock pou vann.

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Espesifikasyon pou FDD8N50NZTM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDD8N50NZTM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 500V 6.5A DPAK

Seri : UniFET-II™

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 500V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 850 mOhm @ 3.25A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 18nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 735pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 90W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : DPAK

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDD , FDD8N

dokiman pou FDD8N50NZTM

Fich : FDD8N50NZTM.pdf

pwodwi ki gen rapò pou FDD8N50NZTM ON Semiconductor

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