BSO130P03SHXUMA1 - MOSFET P-CH 30V 9.2A 8DSO

Fabricant Nimewo Pati

BSO130P03SHXUMA1

Entèn Nimewo Pati

AX-BSO130P03SHXUMA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET P-CH 30V 9.2A 8DSO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

772255 Pieces

referans pri

~~USD 0.3633~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BSO130P03SHXUMA1 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou BSO130P03SHXUMA1

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : BSO130P03SHXUMA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET P-CH 30V 9.2A 8DSO

Seri : OptiMOS™

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 13 mOhm @ 11.7A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 140µA

Chaje Gate (Qg) (Max) @ Vgs : 81nC @ 10V

Vgs (Max) : ±25V

Antre kapasite (Ciss) (Max) @ Vds : 3520pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.56W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : P-DSO-8

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : BSO13 , BSO130P0

dokiman pou BSO130P03SHXUMA1

Fich : BSO130P03SHXUMA1.pdf

pwodwi ki gen rapò pou BSO130P03SHXUMA1 Infineon Technologies

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