FQA11N90 - MOSFET N-CH 900V 11.4A TO-3P

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 900V 11.4A TO-3P
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
8937 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQA11N90 nan stock pou vann.
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Espesifikasyon pou FQA11N90

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FQA11N90
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 900V 11.4A TO-3P
Seri : QFET®
Estati Pati : Obsolete
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 900V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.4A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 960 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ Id : 5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 94nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 300W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-3P
Pake / Ka : TO-3P-3, SC-65-3
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FQ , FQA1

dokiman pou FQA11N90

Fich : FQA11N90.pdf

pwodwi ki gen rapò pou FQA11N90 ON Semiconductor

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