IRLML2402TRPBF - MOSFET N-CH 20V 1.2A SOT-23

Fabricant Nimewo Pati

IRLML2402TRPBF

Entèn Nimewo Pati

AX-IRLML2402TRPBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 20V 1.2A SOT-23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3652325 Pieces

referans pri

~~USD 0.076818~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRLML2402TRPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRLML2402TRPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRLML2402TRPBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 20V 1.2A SOT-23

Seri : HEXFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.2A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.7V, 4.5V

RD sou (Max) @ Id, Vgs : 250 mOhm @ 930mA, 4.5V

Vgs (th) (Max) @ Id : 700mV @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 3.9nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 110pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 540mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : Micro3™/SOT-23

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRLM , IRLML24

dokiman pou IRLML2402TRPBF

Fich : IRLML2402TRPBF.pdf

pwodwi ki gen rapò pou IRLML2402TRPBF Infineon Technologies

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