EGP30J - DIODE GEN PURP 600V 3A DO201AD

Fabricant Nimewo Pati

EGP30J

Entèn Nimewo Pati

AX-EGP30J

Fabricant

ON Semiconductor

Kout Deskripsyon

DIODE GEN PURP 600V 3A DO201AD

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

2119120 Pieces

referans pri

~~USD 0.132396~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen EGP30J nan stock pou vann.

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Espesifikasyon pou EGP30J

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : EGP30J

Fabricant : ON Semiconductor

Deskripsyon : DIODE GEN PURP 600V 3A DO201AD

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 3A

Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 3A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 75ns

Kouran - Fèy Reverse @ Vr : 5µA @ 600V

Kapasite @ Vr, F : 75pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : DO-201AD, Axial

Pake Aparèy Founisè : DO-201AD

Operating Tanperati - Junction : -65°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : EG , EGP

dokiman pou EGP30J

Fich : EGP30J.pdf

pwodwi ki gen rapò pou EGP30J ON Semiconductor

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