IRFD224 - MOSFET N-CH 250V 630MA 4-DIP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 250V 630MA 4-DIP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
451500 Pieces
referans pri
USD 0.621396
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFD224 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou IRFD224

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRFD224
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 250V 630MA 4-DIP
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 630mA (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 1.1 Ohm @ 380mA, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 260pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : 4-DIP, Hexdip, HVMDIP
Pake / Ka : 4-DIP (0.300", 7.62mm)
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IR , IRF

dokiman pou IRFD224

Fich : IRFD224.pdf

pwodwi ki gen rapò pou IRFD224 Vishay Siliconix

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