FQA19N60 - MOSFET N-CH 600V 18.5A TO-3P

Fabricant Nimewo Pati

FQA19N60

Entèn Nimewo Pati

AX-FQA19N60

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 600V 18.5A TO-3P

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

100775 Pieces

referans pri

~~USD 2.784~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQA19N60 nan stock pou vann.

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Espesifikasyon pou FQA19N60

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQA19N60

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 600V 18.5A TO-3P

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18.5A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 380 mOhm @ 9.3A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 90nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 3600pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 300W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-3PN

Pake / Ka : TO-3P-3, SC-65-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQ , FQA1

dokiman pou FQA19N60

Fich : FQA19N60.pdf

pwodwi ki gen rapò pou FQA19N60 ON Semiconductor

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