FQD2N100TM - MOSFET N-CH 1000V 1.6A DPAK

Fabricant Nimewo Pati

FQD2N100TM

Entèn Nimewo Pati

AX-FQD2N100TM

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 1000V 1.6A DPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

775965 Pieces

referans pri

~~USD 0.361566~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQD2N100TM nan stock pou vann.

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Espesifikasyon pou FQD2N100TM

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQD2N100TM

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 1000V 1.6A DPAK

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 1000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.6A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 9 Ohm @ 800mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 15.5nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 520pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.5W (Ta), 50W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D-Pak

Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQD , FQD2N

dokiman pou FQD2N100TM

Fich : FQD2N100TM.pdf

pwodwi ki gen rapò pou FQD2N100TM ON Semiconductor

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