VP0109N3-G - MOSFET P-CH 90V 0.25A TO92-3

Fabricant Nimewo Pati

VP0109N3-G

Entèn Nimewo Pati

AX-VP0109N3-G

Fabricant

Microchip Technology

Kout Deskripsyon

MOSFET P-CH 90V 0.25A TO92-3

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

556665 Pieces

referans pri

~~USD 0.504~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VP0109N3-G nan stock pou vann.

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Espesifikasyon pou VP0109N3-G

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PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : VP0109N3-G

Fabricant : Microchip Technology

Deskripsyon : MOSFET P-CH 90V 0.25A TO92-3

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 90V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 250mA (Tj)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 5V, 10V

RD sou (Max) @ Id, Vgs : 8 Ohm @ 500mA, 10V

Vgs (th) (Max) @ Id : 3.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : -

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 60pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-92-3

Pake / Ka : TO-226-3, TO-92-3 (TO-226AA)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : VP0 , VP010

dokiman pou VP0109N3-G

Fich : VP0109N3-G.pdf

pwodwi ki gen rapò pou VP0109N3-G Microchip Technology

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