SE30PAGHM3/I - DIODE GEN PURP 400V 3A DO221BC

Fabricant Nimewo Pati

SE30PAGHM3/I

Entèn Nimewo Pati

AX-SE30PAGHM3/I

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 400V 3A DO221BC

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

3976245 Pieces

referans pri

~~USD 0.07056~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SE30PAGHM3/I nan stock pou vann.

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Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou SE30PAGHM3/I

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : SE30PAGHM3/I

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 400V 3A DO221BC

Seri : eSMP®

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 400V

Kouran - Mwayèn Rèktifye (Io) : 3A

Voltage - Forward (Vf) (Max) @ Si : 1.16V @ 3A

Vitès : Standard Recovery >500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 1.3µs

Kouran - Fèy Reverse @ Vr : 5µA @ 400V

Kapasite @ Vr, F : 13pF @ 4V, 1MHz

Mounting Kalite : Surface Mount

Pake / Ka : DO-221BC, SMA Flat Leads Exposed Pad

Pake Aparèy Founisè : DO-221BC (SMPA)

Operating Tanperati - Junction : -55°C ~ 175°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : SE30 , SE30PA

dokiman pou SE30PAGHM3/I

Fich : SE30PAGHM3/I.pdf

pwodwi ki gen rapò pou SE30PAGHM3/I Vishay Semiconductor Diodes Division

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