W979H6KBVX2E TR - IC DRAM 512M PARALLEL 134VFBGA
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IC DRAM 512M PARALLEL 134VFBGA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
148075 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen W979H6KBVX2E TR nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou W979H6KBVX2E TR
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
W979H6KBVX2E TR
Fabricant :
Winbond Electronics
Deskripsyon :
IC DRAM 512M PARALLEL 134VFBGA
Seri :
-
Estati Pati :
Active
Kalite memwa yo :
Volatile
Fòma memwa :
DRAM
Teknoloji :
SDRAM - Mobile LPDDR2
Size memwa :
512Mb (32M x 16)
Frè frekans lan :
400MHz
Ekri Sik Tan - Pawòl, Page :
15ns
Tan aksè :
-
Entèfas memwa :
Parallel
Voltage - Pwovizyon pou :
1.14V ~ 1.95V
Operating Tanperati :
-25°C ~ 85°C (TC)
Mounting Kalite :
Surface Mount
Pake / Ka :
134-VFBGA
Pake Aparèy Founisè :
134-VFBGA (10x11.5)
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou W979H6KBVX2E TR
Fich :
W979H6KBVX2E TR.pdf
pwodwi ki gen rapò pou W979H6KBVX2E TR Winbond Electronics
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