RMPG06GHE3_A/54 - DIODE GEN PURP 400V 1A MPG06

Fabricant Nimewo Pati

RMPG06GHE3_A/54

Entèn Nimewo Pati

AX-RMPG06GHE3_A/54

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 400V 1A MPG06

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

4813245 Pieces

referans pri

~~USD 0.05829~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RMPG06GHE3_A/54 nan stock pou vann.

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Espesifikasyon pou RMPG06GHE3_A/54

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : RMPG06GHE3_A/54

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 400V 1A MPG06

Seri : -

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 400V

Kouran - Mwayèn Rèktifye (Io) : 1A

Voltage - Forward (Vf) (Max) @ Si : 1.3V @ 1A

Vitès : Fast Recovery =< 500ns, > 200mA (Io)

Ranvèse Tan Reverse (trr) : 150ns

Kouran - Fèy Reverse @ Vr : 5µA @ 400V

Kapasite @ Vr, F : 6.6pF @ 4V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : MPG06, Axial

Pake Aparèy Founisè : MPG06

Operating Tanperati - Junction : -55°C ~ 150°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RMPG0 , RMPG06G

dokiman pou RMPG06GHE3_A/54

Fich : RMPG06GHE3_A/54.pdf

pwodwi ki gen rapò pou RMPG06GHE3_A/54 Vishay Semiconductor Diodes Division

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