MAP6KE51AE3 - TVS DIODE 43.6V 70.1V T-18

Fabricant Nimewo Pati

MAP6KE51AE3

Entèn Nimewo Pati

AX-MAP6KE51AE3

Fabricant

Microsemi Corporation

Kout Deskripsyon

TVS DIODE 43.6V 70.1V T-18

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

15664 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MAP6KE51AE3 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou MAP6KE51AE3

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : MAP6KE51AE3

Fabricant : Microsemi Corporation

Deskripsyon : TVS DIODE 43.6V 70.1V T-18

Seri : Military, MIL-PRF-19500

Estati Pati : Active

Kalite : Zener

Chanèl Unidirèksyonèl : 1

Chanèl bidirèksyonèl yo : -

Voltage - Ranvèse kanpe (Tip) : 43.6V

Vòltaj - Dekonpozisyon (Min) : 48.5V

Voltage - blocage (Max) @ Ipp : 70.1V

Kouran - Pik batman (10 / 1000µs) : 8.6A

Pouvwa - Peak batman kè : 600W

Pwoteksyon Liy Pouvwa : No

Aplikasyon : General Purpose

Kapasite @ frekans : -

Operating Tanperati : -65°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake / Ka : T-18, Axial

Pake Aparèy Founisè : T-18

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : MAP , MAP6K

dokiman pou MAP6KE51AE3

Fich : MAP6KE51AE3.pdf

pwodwi ki gen rapò pou MAP6KE51AE3 Microsemi Corporation

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