HGTD1N120BNS9A - IGBT 1200V 5.3A 60W TO252AA
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IGBT 1200V 5.3A 60W TO252AA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
684390 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen HGTD1N120BNS9A nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou HGTD1N120BNS9A
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
HGTD1N120BNS9A
Fabricant :
ON Semiconductor
Deskripsyon :
IGBT 1200V 5.3A 60W TO252AA
Seri :
-
Estati Pati :
Active
Kalite IGBT :
NPT
Voltage - Pèseptè ki emèt deba (Max) :
1200V
Kouran - Pèseptè (Ic) (Max) :
5.3A
Kouran - Pèseptè batman (Icm) :
6A
Vce (sou) (Max) @ Vge, Ic :
2.9V @ 15V, 1A
Pouvwa - Max :
60W
Oblije chanje enèji :
70µJ (on), 90µJ (off)
Kalite Antre :
Standard
Gate chaje :
14nC
Td (on / off) @ 25 ° C :
15ns/67ns
Kondisyon egzamen an :
960V, 1A, 82 Ohm, 15V
Ranvèse Tan Reverse (trr) :
-
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè :
TO-252AA
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou HGTD1N120BNS9A
Fich :
HGTD1N120BNS9A.pdf
pwodwi ki gen rapò pou HGTD1N120BNS9A ON Semiconductor
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