IRFBE30LPBF - MOSFET N-CH 800V 4.1A TO-262

Fabricant Nimewo Pati

IRFBE30LPBF

Entèn Nimewo Pati

AX-IRFBE30LPBF

Fabricant

Vishay Siliconix

Kout Deskripsyon

MOSFET N-CH 800V 4.1A TO-262

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

144765 Pieces

referans pri

~~USD 1.938~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFBE30LPBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

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Espesifikasyon pou IRFBE30LPBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFBE30LPBF

Fabricant : Vishay Siliconix

Deskripsyon : MOSFET N-CH 800V 4.1A TO-262

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.1A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3 Ohm @ 2.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 78nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : I2PAK

Pake / Ka : TO-262-3 Long Leads, I²Pak, TO-262AA

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRF , IRFBE

dokiman pou IRFBE30LPBF

Fich : IRFBE30LPBF.pdf

pwodwi ki gen rapò pou IRFBE30LPBF Vishay Siliconix

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