FDC642P-F085P - PMOS SSOT6 20V 65 MOHM

Fabricant Nimewo Pati

FDC642P-F085P

Entèn Nimewo Pati

AX-FDC642P-F085P

Fabricant

ON Semiconductor

Kout Deskripsyon

PMOS SSOT6 20V 65 MOHM

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

53040 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDC642P-F085P nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou FDC642P-F085P

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDC642P-F085P

Fabricant : ON Semiconductor

Deskripsyon : PMOS SSOT6 20V 65 MOHM

Seri : Automotive, AEC-Q101, PowerTrench®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 65 mOhm @ 4A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 9nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 630pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.2W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TSOT-23-6

Pake / Ka : SOT-23-6 Thin, TSOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDC6 , FDC642

dokiman pou FDC642P-F085P

Fich : FDC642P-F085P.pdf

pwodwi ki gen rapò pou FDC642P-F085P ON Semiconductor

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