IRF5806 - MOSFET P-CH 20V 4A 6-TSOP

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET P-CH 20V 4A 6-TSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
64950 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRF5806 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
Posiblite peman:
Paypal (Credit Card)
Bank Transfer (Wire Transfer)
Western Union
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Espesifikasyon pou IRF5806

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : IRF5806
Fabricant : Infineon Technologies
Deskripsyon : MOSFET P-CH 20V 4A 6-TSOP
Seri : HEXFET®
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V
RD sou (Max) @ Id, Vgs : 86 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 11.4nC @ 4.5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 594pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : Micro6™(TSOP-6)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : IR , IRF

dokiman pou IRF5806

Fich : IRF5806.pdf

pwodwi ki gen rapò pou IRF5806 Infineon Technologies

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