APT34N80B2C3G - MOSFET N-CH 800V 34A T-MAX

Fabricant Nimewo Pati

APT34N80B2C3G

Entèn Nimewo Pati

AX-APT34N80B2C3G

Fabricant

Microsemi Corporation

Kout Deskripsyon

MOSFET N-CH 800V 34A T-MAX

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

49134 Pieces

referans pri

~~USD 6.852~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen APT34N80B2C3G nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou APT34N80B2C3G

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : APT34N80B2C3G

Fabricant : Microsemi Corporation

Deskripsyon : MOSFET N-CH 800V 34A T-MAX

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 34A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 145 mOhm @ 22A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 2mA

Chaje Gate (Qg) (Max) @ Vgs : 355nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 4510pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 417W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : T-MAX™ [B2]

Pake / Ka : TO-247-3 Variant

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : APT3 , APT34N

dokiman pou APT34N80B2C3G

Fich : APT34N80B2C3G.pdf

pwodwi ki gen rapò pou APT34N80B2C3G Microsemi Corporation

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