IMBD4448-G3-18 - DIODE GEN PURP 75V 150MA SOT23
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
DIODE GEN PURP 75V 150MA SOT23
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
11136150 Pieces
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen IMBD4448-G3-18 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
Espesifikasyon pou IMBD4448-G3-18
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati :
IMBD4448-G3-18
Fabricant :
Vishay Semiconductor Diodes Division
Deskripsyon :
DIODE GEN PURP 75V 150MA SOT23
Seri :
Automotive, AEC-Q101
Estati Pati :
Active
Kalite dyòd :
Standard
Voltage - DC Ranvèse (Vr) (Max) :
75V
Kouran - Mwayèn Rèktifye (Io) :
150mA
Voltage - Forward (Vf) (Max) @ Si :
1V @ 10mA
Vitès :
Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) :
4ns
Kouran - Fèy Reverse @ Vr :
2.5µA @ 70V
Kapasite @ Vr, F :
-
Mounting Kalite :
Surface Mount
Pake / Ka :
TO-236-3, SC-59, SOT-23-3
Pake Aparèy Founisè :
SOT-23
Operating Tanperati - Junction :
150°C (Max)
Pwa :
-
kondisyon :
Nouvo ak orijinal
dokiman pou IMBD4448-G3-18
Fich :
IMBD4448-G3-18.pdf
pwodwi ki gen rapò pou IMBD4448-G3-18 Vishay Semiconductor Diodes Division
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