IRFHM830TR2PBF - MOSFET N-CH 30V 21A PQFN

Fabricant Nimewo Pati

IRFHM830TR2PBF

Entèn Nimewo Pati

AX-IRFHM830TR2PBF

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 30V 21A PQFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

10824 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IRFHM830TR2PBF nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IRFHM830TR2PBF

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IRFHM830TR2PBF

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 30V 21A PQFN

Seri : HEXFET®

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Ta), 40A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.35V @ 50µA

Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2155pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.7W (Ta), 37W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : PQFN (3x3)

Pake / Ka : 8-VQFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IRFH , IRFHM83

dokiman pou IRFHM830TR2PBF

Fich : IRFHM830TR2PBF.pdf

pwodwi ki gen rapò pou IRFHM830TR2PBF Infineon Technologies

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