RN1106MFV(TL3,T) - TRANS PREBIAS NPN 0.15W VESM

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
TRANS PREBIAS NPN 0.15W VESM
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
21504 Pieces
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RN1106MFV(TL3,T) nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou RN1106MFV(TL3,T)

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : RN1106MFV(TL3,T)
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : TRANS PREBIAS NPN 0.15W VESM
Seri : -
Estati Pati : Obsolete
Kalite tranzistò : NPN - Pre-Biased
Kouran - Pèseptè (Ic) (Max) : 100mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Rezistans - Sèvi (R1) : 4.7 kOhms
Rezistans - Sèvi ak emeteur (R2) : 47 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic : 300mV @ 500µA, 5mA
Kouran - Cutoff Pèseptè (Max) : 500nA
Frekans - Tranzisyon : -
Pouvwa - Max : 150mW
Mounting Kalite : Surface Mount
Pake / Ka : SOT-723
Pake Aparèy Founisè : VESM
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : RN110 , RN1106MF

dokiman pou RN1106MFV(TL3,T)

pwodwi ki gen rapò pou RN1106MFV(TL3,T) Toshiba Semiconductor and Storage

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