IMBD4448-HE3-18 - DIODE GEN PURP 75V 150MA SOT23

Fabricant Nimewo Pati

IMBD4448-HE3-18

Entèn Nimewo Pati

AX-IMBD4448-HE3-18

Fabricant

Vishay Semiconductor Diodes Division

Kout Deskripsyon

DIODE GEN PURP 75V 150MA SOT23

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

11907485 Pieces

referans pri

~~USD 0.023562~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen IMBD4448-HE3-18 nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou IMBD4448-HE3-18

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : IMBD4448-HE3-18

Fabricant : Vishay Semiconductor Diodes Division

Deskripsyon : DIODE GEN PURP 75V 150MA SOT23

Seri : Automotive, AEC-Q101

Estati Pati : Active

Kalite dyòd : Standard

Voltage - DC Ranvèse (Vr) (Max) : 75V

Kouran - Mwayèn Rèktifye (Io) : 150mA

Voltage - Forward (Vf) (Max) @ Si : 1V @ 10mA

Vitès : Small Signal =< 200mA (Io), Any Speed

Ranvèse Tan Reverse (trr) : 4ns

Kouran - Fèy Reverse @ Vr : 2.5µA @ 70V

Kapasite @ Vr, F : -

Mounting Kalite : Surface Mount

Pake / Ka : TO-236-3, SC-59, SOT-23-3

Pake Aparèy Founisè : SOT-23

Operating Tanperati - Junction : 150°C (Max)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : IMBD4 , IMBD444

dokiman pou IMBD4448-HE3-18

Fich : IMBD4448-HE3-18.pdf

pwodwi ki gen rapò pou IMBD4448-HE3-18 Vishay Semiconductor Diodes Division

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