GB02SHT06-46 - DIODE SCHOTTKY 600V 4A

Fabricant Nimewo Pati

GB02SHT06-46

Entèn Nimewo Pati

AX-GB02SHT06-46

Fabricant

GeneSiC Semiconductor

Kout Deskripsyon

DIODE SCHOTTKY 600V 4A

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

13920 Pieces

referans pri

~~USD 32.214~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GB02SHT06-46 nan stock pou vann.

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Espesifikasyon pou GB02SHT06-46

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GB02SHT06-46

Fabricant : GeneSiC Semiconductor

Deskripsyon : DIODE SCHOTTKY 600V 4A

Seri : -

Estati Pati : Active

Kalite dyòd : Silicon Carbide Schottky

Voltage - DC Ranvèse (Vr) (Max) : 600V

Kouran - Mwayèn Rèktifye (Io) : 4A (DC)

Voltage - Forward (Vf) (Max) @ Si : 1.6V @ 1A

Vitès : No Recovery Time > 500mA (Io)

Ranvèse Tan Reverse (trr) : 0ns

Kouran - Fèy Reverse @ Vr : 5µA @ 600V

Kapasite @ Vr, F : 76pF @ 1V, 1MHz

Mounting Kalite : Through Hole

Pake / Ka : TO-206AB, TO-46-3 Metal Can

Pake Aparèy Founisè : TO-46

Operating Tanperati - Junction : -55°C ~ 225°C

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GB02 , GB02SH

dokiman pou GB02SHT06-46

Fich : GB02SHT06-46.pdf

pwodwi ki gen rapò pou GB02SHT06-46 GeneSiC Semiconductor

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