FDFMA2P859T - MOSFET P-CH 20V 3A MICROFET

Fabricant Nimewo Pati

FDFMA2P859T

Entèn Nimewo Pati

AX-FDFMA2P859T

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 20V 3A MICROFET

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

9288 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDFMA2P859T nan stock pou vann.

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Espesifikasyon pou FDFMA2P859T

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDFMA2P859T

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 20V 3A MICROFET

Seri : PowerTrench®

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 120 mOhm @ 3A, 4.5V

Vgs (th) (Max) @ Id : 1.3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 6nC @ 4.5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 435pF @ 10V

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 1.4W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : MicroFET 2x2 Thin

Pake / Ka : 6-UDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDF , FDFMA

dokiman pou FDFMA2P859T

Fich : FDFMA2P859T.pdf

pwodwi ki gen rapò pou FDFMA2P859T ON Semiconductor

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