FDB13AN06A0 - MOSFET N-CH 60V 62A TO-263AB

Fabricant Nimewo Pati

FDB13AN06A0

Entèn Nimewo Pati

AX-FDB13AN06A0

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 60V 62A TO-263AB

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Plon gratis / RoHS Konfòm

akouchman Tan

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403730 Pieces

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~~USD 0.69492~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDB13AN06A0 nan stock pou vann.

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Espesifikasyon pou FDB13AN06A0

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDB13AN06A0

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 60V 62A TO-263AB

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10.9A (Ta), 62A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V

RD sou (Max) @ Id, Vgs : 13.5 mOhm @ 62A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 29nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 115W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : D²PAK

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDB , FDB13

dokiman pou FDB13AN06A0

Fich : FDB13AN06A0.pdf

pwodwi ki gen rapò pou FDB13AN06A0 ON Semiconductor

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