SE30PAJHM3/I - DIODE GEN PURP 600V 3A DO221BC

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 600V 3A DO221BC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3976245 Pieces
referans pri
USD 0.07056
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SE30PAJHM3/I nan stock pou vann.
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Espesifikasyon pou SE30PAJHM3/I

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : SE30PAJHM3/I
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 600V 3A DO221BC
Seri : eSMP®
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 600V
Kouran - Mwayèn Rèktifye (Io) : 3A
Voltage - Forward (Vf) (Max) @ Si : 1.16V @ 3A
Vitès : Standard Recovery >500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 1.3µs
Kouran - Fèy Reverse @ Vr : 5µA @ 600V
Kapasite @ Vr, F : 13pF @ 4V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-221BC, SMA Flat Leads Exposed Pad
Pake Aparèy Founisè : DO-221BC (SMPA)
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : SE30 , SE30PA

dokiman pou SE30PAJHM3/I

pwodwi ki gen rapò pou SE30PAJHM3/I Vishay Semiconductor Diodes Division

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