FQT1N80TF-WS - MOSFET N-CH 800V 0.2A SOT-223

Fabricant Nimewo Pati

FQT1N80TF-WS

Entèn Nimewo Pati

AX-FQT1N80TF-WS

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 800V 0.2A SOT-223

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1005755 Pieces

referans pri

~~USD 0.278958~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FQT1N80TF-WS nan stock pou vann.

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Espesifikasyon pou FQT1N80TF-WS

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FQT1N80TF-WS

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 800V 0.2A SOT-223

Seri : QFET®

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 800V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 200mA (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 20 Ohm @ 100mA, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 7.2nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 195pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2.1W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : SOT-223-3

Pake / Ka : TO-261-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FQT1 , FQT1N8

dokiman pou FQT1N80TF-WS

Fich : FQT1N80TF-WS.pdf

pwodwi ki gen rapò pou FQT1N80TF-WS ON Semiconductor

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