RSS110N03FU6TB - MOSFET N-CH 30V 11A 8SOIC

Fabricant Nimewo Pati

RSS110N03FU6TB

Entèn Nimewo Pati

AX-RSS110N03FU6TB

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 11A 8SOIC

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Espesifikasyon pou RSS110N03FU6TB

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Nimewo pati : RSS110N03FU6TB

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 30V 11A 8SOIC

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 10.7 mOhm @ 11A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 5V

Vgs (Max) : 20V

Antre kapasite (Ciss) (Max) @ Vds : 1300pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 2W (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOP

Pake / Ka : 8-SOIC (0.154", 3.90mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : RSS1 , RSS110N

dokiman pou RSS110N03FU6TB

Fich : RSS110N03FU6TB.pdf

pwodwi ki gen rapò pou RSS110N03FU6TB Rohm Semiconductor

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