GP1M004A090H - MOSFET N-CH 900V 4A TO220

Fabricant Nimewo Pati

GP1M004A090H

Entèn Nimewo Pati

AX-GP1M004A090H

Fabricant

Global Power Technologies Group

Kout Deskripsyon

MOSFET N-CH 900V 4A TO220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

20888 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen GP1M004A090H nan stock pou vann.

D 'opsyon ak anbake tan:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Posiblite peman:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Espesifikasyon pou GP1M004A090H

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : GP1M004A090H

Fabricant : Global Power Technologies Group

Deskripsyon : MOSFET N-CH 900V 4A TO220

Seri : -

Estati Pati : Obsolete

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 900V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 4 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 955pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 123W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : GP1M , GP1M00

dokiman pou GP1M004A090H

Fich : GP1M004A090H.pdf

pwodwi ki gen rapò pou GP1M004A090H Global Power Technologies Group

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