H7N1002LSTL-E - MOSFET N-CH 100V LDPAK

Fabricant Nimewo Pati

H7N1002LSTL-E

Entèn Nimewo Pati

AX-H7N1002LSTL-E

Fabricant

Renesas Electronics America

Kout Deskripsyon

MOSFET N-CH 100V LDPAK

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

21736 Pieces

referans pri

~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen H7N1002LSTL-E nan stock pou vann.

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Espesifikasyon pou H7N1002LSTL-E

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : H7N1002LSTL-E

Fabricant : Renesas Electronics America

Deskripsyon : MOSFET N-CH 100V LDPAK

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 100V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 75A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 10 mOhm @ 37.5A, 10V

Vgs (th) (Max) @ Id : -

Chaje Gate (Qg) (Max) @ Vgs : 155nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 9700pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 100W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 4-LDPAK

Pake / Ka : SC-83

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : H7N1 , H7N100

dokiman pou H7N1002LSTL-E

Fich : H7N1002LSTL-E.pdf

pwodwi ki gen rapò pou H7N1002LSTL-E Renesas Electronics America

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