NVMFS5830NLT1G - MOSFET N-CH 40V 185A SO8FL

Fabricant Nimewo Pati

NVMFS5830NLT1G

Entèn Nimewo Pati

AX-NVMFS5830NLT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET N-CH 40V 185A SO8FL

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

15760 Pieces

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~~USD 0~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

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Espesifikasyon pou NVMFS5830NLT1G

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stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : NVMFS5830NLT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET N-CH 40V 185A SO8FL

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 40V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 29A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 2.3 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 113nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5880pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.8W (Ta), 158W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : NVMF , NVMFS58

dokiman pou NVMFS5830NLT1G

Fich : NVMFS5830NLT1G.pdf

pwodwi ki gen rapò pou NVMFS5830NLT1G ON Semiconductor

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