FDFMA2P029Z-F106 - -20V -3.1A 95 O PCH ER T

Fabricant Nimewo Pati

FDFMA2P029Z-F106

Entèn Nimewo Pati

AX-FDFMA2P029Z-F106

Fabricant

ON Semiconductor

Kout Deskripsyon

-20V -3.1A 95 O PCH ER T

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1200155 Pieces

referans pri

~~USD 0.233772~~

pri nou

- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDFMA2P029Z-F106 nan stock pou vann.

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Espesifikasyon pou FDFMA2P029Z-F106

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Nimewo pati : FDFMA2P029Z-F106

Fabricant : ON Semiconductor

Deskripsyon : -20V -3.1A 95 O PCH ER T

Seri : PowerTrench®

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.1A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 2.5V, 4.5V

RD sou (Max) @ Id, Vgs : 95 mOhm @ 3.1A, 4.5V

Vgs (th) (Max) @ Id : 1.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 4.5V

Vgs (Max) : ±12V

Antre kapasite (Ciss) (Max) @ Vds : 720pF @ 10V

Karakteristik FET : Schottky Diode (Isolated)

Disipasyon Pouvwa (Max) : 1.4W (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-MicroFET (2x2)

Pake / Ka : 6-VDFN Exposed Pad

Pwa : -

kondisyon : Nouvo ak orijinal

Lyen ki gen rapò : FDFMA , FDFMA2P0

dokiman pou FDFMA2P029Z-F106

Fich : FDFMA2P029Z-F106.pdf

pwodwi ki gen rapò pou FDFMA2P029Z-F106 ON Semiconductor

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