BAQ35-GS18 - DIODE GEN PURP 125V 200MA SOD80

Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 125V 200MA SOD80
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9823680 Pieces
referans pri
USD 0.02856
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen BAQ35-GS18 nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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Espesifikasyon pou BAQ35-GS18

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : BAQ35-GS18
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 125V 200MA SOD80
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 125V
Kouran - Mwayèn Rèktifye (Io) : 200mA
Voltage - Forward (Vf) (Max) @ Si : 1V @ 100mA
Vitès : Small Signal =< 200mA (Io), Any Speed
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 1nA @ 60V
Kapasite @ Vr, F : 3pF @ 0V, 1MHz
Mounting Kalite : Surface Mount
Pake / Ka : DO-213AC, MINI-MELF, SOD-80
Pake Aparèy Founisè : SOD-80 MiniMELF
Operating Tanperati - Junction : -65°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : BAQ , BAQ35

dokiman pou BAQ35-GS18

pwodwi ki gen rapò pou BAQ35-GS18 Vishay Semiconductor Diodes Division

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