FDG315N - MOSFET N-CH 30V 2A SC70-6

Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 30V 2A SC70-6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1943660 Pieces
referans pri
USD 0.144348
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen FDG315N nan stock pou vann.
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Espesifikasyon pou FDG315N

Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Nimewo pati : FDG315N
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 30V 2A SC70-6
Seri : PowerTrench®
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 120 mOhm @ 2A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4nC @ 5V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 220pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 750mW (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : SC-88 (SC-70-6)
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pwa : -
kondisyon : Nouvo ak orijinal
Lyen ki gen rapò : FD , FDG

dokiman pou FDG315N

Fich : FDG315N.pdf

pwodwi ki gen rapò pou FDG315N ON Semiconductor

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