ZXMHN6A07T8TA Mode
Espesifikasyon pou ZXMHN6A07T8TA
Nimewo pati : ZXMHN6A07T8TA
Fabricant : Diodes Incorporated
Deskripsyon : MOSFET 4N-CH 60V 1.4A SM8
Seri : -
Estati Pati : Active
FET Kalite : 4 N-Channel (H-Bridge)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A
RD sou (Max) @ Id, Vgs : 300 mOhm @ 1.8A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 3.2nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 166pF @ 40V
Pouvwa - Max : 1.6W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-223-8
Pake Aparèy Founisè : SM8
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 4N-CH 60V 1.4A SM8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9219 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou ZXMHN6A07T8TA Diodes Incorporated
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