Espesifikasyon pou ZXMHC3A01N8TC

Nimewo pati : ZXMHC3A01N8TC
Fabricant : Diodes Incorporated
Deskripsyon : MOSFET 2N/2P-CH 30V 8-SOIC
Seri : -
Estati Pati : Active
FET Kalite : 2 N and 2 P-Channel (H-Bridge)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.17A, 1.64A
RD sou (Max) @ Id, Vgs : 125 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 3.9nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 190pF @ 25V
Pouvwa - Max : 870mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOP
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
MOSFET 2N/2P-CH 30V 8-SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
895790 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen ZXMHC3A01N8TC nan stock pou vann.
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pwodwi ki gen rapò pou ZXMHC3A01N8TC Diodes Incorporated

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