Espesifikasyon pou VS-GB200LH120N

Nimewo pati : VS-GB200LH120N
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : IGBT 1200V 370A 1562W INT-A-PAK
Seri : -
Estati Pati : Active
Kalite IGBT : -
Nou konte genyen : Single
Voltage - Pèseptè ki emèt deba (Max) : 1200V
Kouran - Pèseptè (Ic) (Max) : 370A
Pouvwa - Max : 1562W
Vce (sou) (Max) @ Vge, Ic : 2.07V @ 15V, 200A (Typ)
Kouran - Cutoff Pèseptè (Max) : 100nA
Antre kapasite (Cies) @ Vce : 18nF @ 25V
Antre : Standard
NTC thermistor : No
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Chassis Mount
Pake / Ka : Double INT-A-PAK (3 + 4)
Pake Aparèy Founisè : Double INT-A-PAK
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
IGBT 1200V 370A 1562W INT-A-PAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9128 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-GB200LH120N nan stock pou vann.
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pwodwi ki gen rapò pou VS-GB200LH120N Vishay Semiconductor Diodes Division

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