Espesifikasyon pou VS-8EWF02S-M3

Nimewo pati : VS-8EWF02S-M3
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE GEN PURP 200V 8A TO252AA
Seri : -
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 200V
Kouran - Mwayèn Rèktifye (Io) : 8A
Voltage - Forward (Vf) (Max) @ Si : 1.2V @ 8A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 55ns
Kouran - Fèy Reverse @ Vr : 100µA @ 200V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pake Aparèy Founisè : D-PAK (TO-252AA)
Operating Tanperati - Junction : -40°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 200V 8A TO252AA
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
132840 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen VS-8EWF02S-M3 nan stock pou vann.
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pwodwi ki gen rapò pou VS-8EWF02S-M3 Vishay Semiconductor Diodes Division

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