Espesifikasyon pou V12PM10-M3/I

Nimewo pati : V12PM10-M3/I
Fabricant : Vishay Semiconductor Diodes Division
Deskripsyon : DIODE SCHOTTKY 100V 12A TO277A
Seri : eSMP®, TMBS®
Estati Pati : Active
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 100V
Kouran - Mwayèn Rèktifye (Io) : 12A
Voltage - Forward (Vf) (Max) @ Si : 750mV @ 12A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 200µA @ 100V
Kapasite @ Vr, F : -
Mounting Kalite : Surface Mount
Pake / Ka : TO-277, 3-PowerDFN
Pake Aparèy Founisè : TO-277A (SMPC)
Operating Tanperati - Junction : -40°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE SCHOTTKY 100V 12A TO277A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1391685 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen V12PM10-M3/I nan stock pou vann.
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