TSM60NB190CM2 RNG PDF Mode Download - MOSFET N-CH 600V 18A TO263

Espesifikasyon pou TSM60NB190CM2 RNG

Nimewo pati : TSM60NB190CM2 RNG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CH 600V 18A TO263

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 18A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 190 mOhm @ 6A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 31nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 1273pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 150.6W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : TO-263 (D²Pak)

Pake / Ka : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TSM60NB190CM2 RNG

Entèn Nimewo Pati

AX-TSM60NB190CM2 RNG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CH 600V 18A TO263

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

313805 moso

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pwodwi ki gen rapò pou TSM60NB190CM2 RNG Taiwan Semiconductor Corporation

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TSM60NB190CM2 RNG Mode

Espesifikasyon pou TSM60NB190CM2 RNG

pwodwi ki gen rapò pou TSM60NB190CM2 RNG Taiwan Semiconductor Corporation