TSM120N06LCR RLG PDF Mode Download - MOSFET N-CH 60V 54A 8PDFN

Espesifikasyon pou TSM120N06LCR RLG

Nimewo pati : TSM120N06LCR RLG

Fabricant : Taiwan Semiconductor Corporation

Deskripsyon : MOSFET N-CH 60V 54A 8PDFN

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 54A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 12 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 36.5nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 2116pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 69W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-PDFN (5x6)

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TSM120N06LCR RLG

Entèn Nimewo Pati

AX-TSM120N06LCR RLG

Fabricant

Taiwan Semiconductor Corporation

Kout Deskripsyon

MOSFET N-CH 60V 54A 8PDFN

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1892530 moso

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pwodwi ki gen rapò pou TSM120N06LCR RLG Taiwan Semiconductor Corporation

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TSM120N06LCR RLG Mode

Espesifikasyon pou TSM120N06LCR RLG

pwodwi ki gen rapò pou TSM120N06LCR RLG Taiwan Semiconductor Corporation