TSM033NB04LCR RLG Mode
Espesifikasyon pou TSM033NB04LCR RLG
Nimewo pati : TSM033NB04LCR RLG
Fabricant : Taiwan Semiconductor Corporation
Deskripsyon : MOSFET SINGLE N-CHANNEL TRENCH
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 21A (Ta), 121A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 3.3 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 79nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4456pF @ 20V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.1W (Ta), 107W (Tc)
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-PDFN (5x6)
Pake / Ka : 8-PowerTDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET SINGLE N-CHANNEL TRENCH
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
570845 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou TSM033NB04LCR RLG Taiwan Semiconductor Corporation
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