TPN6R003NL,LQ Mode
Espesifikasyon pou TPN6R003NL,LQ
Nimewo pati : TPN6R003NL,LQ
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 30V 27A 8TSON-ADV
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 27A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6 mOhm @ 13.5A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta), 32W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)
Pake / Ka : 8-PowerVDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N CH 30V 27A 8TSON-ADV
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1372285 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou TPN6R003NL,LQ Toshiba Semiconductor and Storage
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|---|---|---|---|
| Intel | IC CPLD 128MC 5NS 100FBGA | ||
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