TPN5900CNH,L1Q PDF Mode Download - MOSFET N-CH 150V 9A 8TSON

Espesifikasyon pou TPN5900CNH,L1Q

Nimewo pati : TPN5900CNH,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 150V 9A 8TSON

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 150V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 59 mOhm @ 4.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 75V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta), 39W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TPN5900CNH,L1Q

Entèn Nimewo Pati

AX-TPN5900CNH,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 150V 9A 8TSON

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pwodwi ki gen rapò pou TPN5900CNH,L1Q Toshiba Semiconductor and Storage

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EPM7256AEQC208-10	Intel	IC CPLD 256MC 10NS 208QFP
LC4384V-5TN176I	Lattice Semiconductor Corporation	IC CPLD 384MC 5NS 176TQFP
EPM7256AETC144-7N	Intel	IC CPLD 256MC 7.5NS 144TQFP
EPM1270F256C3	Intel	IC CPLD 980MC 6.2NS 256FBGA
M4A5-256/128-10YNI	Lattice Semiconductor Corporation	IC CPLD 256MC 10NS 208QFP
XCR3512XL-10FT256C	Xilinx Inc.	IC CPLD 512MC 9NS 256BGA
XCR3512XL-12PQG208C	Xilinx Inc.	IC CPLD 512MC 10.8NS 208QFP
XC2C512-10FTG256C	Xilinx Inc.	IC CPLD 512MC 9.2NS 256FBGA

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pwodwi ki gen rapò pou TPN5900CNH,L1Q Toshiba Semiconductor and Storage