TPN4R303NL,L1Q PDF Mode Download - MOSFET N-CH 30V 63A 8TSON

Espesifikasyon pou TPN4R303NL,L1Q

Nimewo pati : TPN4R303NL,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 30V 63A 8TSON

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 40A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 4.3 mOhm @ 20A, 10V

Vgs (th) (Max) @ Id : 2.3V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 14.8nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1400pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta), 34W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TPN4R303NL,L1Q

Entèn Nimewo Pati

AX-TPN4R303NL,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 30V 63A 8TSON

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Plon gratis / RoHS Konfòm

akouchman Tan

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pwodwi ki gen rapò pou TPN4R303NL,L1Q Toshiba Semiconductor and Storage

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Espesifikasyon pou TPN4R303NL,L1Q

pwodwi ki gen rapò pou TPN4R303NL,L1Q Toshiba Semiconductor and Storage